HER305GHA0G vs 1N5404G feature comparison

HER305GHA0G Taiwan Semiconductor

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1N5404G Galaxy Microelectronics

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Samacsys Manufacturer Taiwan Semiconductor
Samacsys Modified On 2020-03-21 13:26:18
Total Weight 1200
Category CO2 Kg 8.8 8.8
CO2 10560
Compliance Temperature Grade Military: -55C to +150C
EU RoHS Version RoHS 2 (2015/863/EU) RoHS 2 (2011/65/EU)
EU RoHS Exemptions 7(a), 7(c)-I
Candidate List Date 2024-01-23
SVHC Over MCV 7439-92-1
CAS Accounted for Wt 99
CA Prop 65 Presence YES
CA Prop 65 CAS Numbers 7440-02-0, 1333-86-4, 7439-92-1
Conflict Mineral Status DRC Conflict Free
Conflict Mineral Status Source CMRT V6.40
Qualifications AEC-Q101
Additional Feature HIGH RELIABILITY, LOW POWER LOSS
Application EFFICIENCY GENERAL PURPOSE
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V 1.1 V
JEDEC-95 Code DO-201AD DO-27
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Non-rep Pk Forward Current-Max 125 A 200 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260 260
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 400 V 400 V
Reverse Current-Max 10 µA
Reverse Recovery Time-Max 0.05 µs
Surface Mount NO NO
Terminal Finish MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 1 38

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