HER303GA0G
vs
HER303G
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
GALAXY SEMI-CONDUCTOR CO LTD
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
|
| Additional Feature |
HIGH RELIABILITY, LOW POWER LOSS
|
|
| Application |
EFFICIENCY
|
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
1 V
|
| JEDEC-95 Code |
DO-201AD
|
|
| JESD-30 Code |
O-PALF-W2
|
|
| JESD-609 Code |
e3
|
|
| Non-rep Pk Forward Current-Max |
125 A
|
200 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Output Current-Max |
3 A
|
3 A
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
ROUND
|
|
| Package Style |
LONG FORM
|
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Rep Pk Reverse Voltage-Max |
200 V
|
200 V
|
| Reverse Current-Max |
10 µA
|
|
| Reverse Recovery Time-Max |
0.05 µs
|
0.05 µs
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
WIRE
|
|
| Terminal Position |
AXIAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
10
|
|
| Base Number Matches |
1
|
23
|
|
|
|
Compare HER303GA0G with alternatives
Compare HER303G with alternatives