HER107 vs RGF1KHE3_B/I feature comparison

HER107 Galaxy Semi-Conductor Co Ltd

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RGF1KHE3_B/I Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.7 V 1.3 V
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 150 °C 175 °C
Output Current-Max 1 A 1 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 800 V 800 V
Reverse Recovery Time-Max 0.07 µs 0.5 µs
Surface Mount NO YES
Base Number Matches 41 1
HTS Code 8541.10.00.80
Date Of Intro 2020-10-09
Additional Feature FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT
Application EFFICIENCY
JEDEC-95 Code DO-214BA
JESD-30 Code R-PDSO-C2
Number of Terminals 2
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Reference Standard AEC-Q101
Reverse Current-Max 5 µA
Reverse Test Voltage 800 V
Terminal Form C BEND
Terminal Position DUAL

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