HER103G vs 1N4003GHR0G feature comparison

HER103G Galaxy Semi-Conductor Co Ltd

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1N4003GHR0G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V
Non-rep Pk Forward Current-Max 30 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 175 °C 150 °C
Output Current-Max 1 A 1 A
Peak Reflow Temperature (Cel) 260 260
Rep Pk Reverse Voltage-Max 200 V 200 V
Reverse Recovery Time-Max 0.05 µs
Surface Mount NO NO
Base Number Matches 1 1
Package Description DO-41, 2 PIN
HTS Code 8541.10.00.80
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature HIGH RELIABILITY, LOW POWER LOSS
Case Connection ISOLATED
JEDEC-95 Code DO-204AL
JESD-30 Code O-PALF-W2
JESD-609 Code e3
Number of Terminals 2
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Reference Standard AEC-Q101
Terminal Finish MATTE TIN
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) 10

Compare HER103G with alternatives

Compare 1N4003GHR0G with alternatives