HEC4023BD
vs
5962R9662102VCX
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
HARRIS SEMICONDUCTOR
|
| Package Description |
DIP,
|
,
|
| Reach Compliance Code |
unknown
|
unknown
|
| HTS Code |
8542.39.00.01
|
8542.39.00.01
|
| Family |
4000/14000/40000
|
4000/14000/40000
|
| JESD-30 Code |
R-CDIP-T14
|
R-GDIP-T14
|
| Load Capacitance (CL) |
50 pF
|
|
| Logic IC Type |
NAND GATE
|
NAND GATE
|
| Number of Functions |
3
|
2
|
| Number of Inputs |
3
|
4
|
| Number of Terminals |
14
|
14
|
| Operating Temperature-Max |
125 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, GLASS-SEALED
|
| Package Code |
DIP
|
DIP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Propagation Delay (tpd) |
135 ns
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
5.08 mm
|
|
| Supply Voltage-Max (Vsup) |
15 V
|
|
| Supply Voltage-Min (Vsup) |
3 V
|
|
| Supply Voltage-Nom (Vsup) |
5 V
|
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
MILITARY
|
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
7.62 mm
|
|
| Base Number Matches |
1
|
2
|
| Total Dose |
|
100k Rad(Si) V
|
|
|
|
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