HB66D6464BA-8
vs
PDM4M6203S66M
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
HITACHI LTD
|
IXYS CORP
|
| Package Description |
,
|
DIMM, DIMM160
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
3A991.B.2.A
|
3A991.B.2.A
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
8 ns
|
15 ns
|
| Additional Feature |
32K X 8 TAG
|
|
| JESD-30 Code |
R-XDMA-N160
|
R-PDMA-N160
|
| Memory Density |
4194304 bit
|
4194304 bit
|
| Memory IC Type |
CACHE TAG SRAM MODULE
|
CACHE TAG SRAM MODULE
|
| Memory Width |
64
|
64
|
| Number of Functions |
1
|
|
| Number of Ports |
1
|
|
| Number of Terminals |
160
|
160
|
| Number of Words |
65536 words
|
65536 words
|
| Number of Words Code |
64000
|
64000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
64KX64
|
64KX64
|
| Output Characteristics |
3-STATE
|
3-STATE
|
| Output Enable |
YES
|
|
| Package Body Material |
UNSPECIFIED
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
MICROELECTRONIC ASSEMBLY
|
MICROELECTRONIC ASSEMBLY
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
|
| Supply Voltage-Min (Vsup) |
3.1 V
|
|
| Supply Voltage-Nom (Vsup) |
3.3 V
|
|
| Surface Mount |
NO
|
NO
|
| Technology |
MOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
2
|
| Clock Frequency-Max (fCLK) |
|
66 MHz
|
| I/O Type |
|
COMMON
|
| Package Code |
|
DIMM
|
| Package Equivalence Code |
|
DIMM160
|
| Standby Voltage-Min |
|
3 V
|
| Supply Current-Max |
|
0.9 mA
|
| Terminal Pitch |
|
1.27 mm
|
|
|
|
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