HB52RF649DC-75B vs M390S6450BTU-C75 feature comparison

HB52RF649DC-75B Elpida Memory Inc

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M390S6450BTU-C75 Samsung Semiconductor

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ELPIDA MEMORY INC SAMSUNG SEMICONDUCTOR INC
Part Package Code MODULE DIMM
Package Description DIMM, DIMM144,32 DIMM, DIMM168
Pin Count 144 168
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode DUAL BANK PAGE BURST SINGLE BANK PAGE BURST
Access Time-Max 5.4 ns 5.4 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz 133 MHz
I/O Type COMMON COMMON
JESD-30 Code R-XDMA-N144 R-XDMA-N168
Memory Density 4831838208 bit 4831838208 bit
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
Memory Width 72 72
Moisture Sensitivity Level 1 1
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 144 168
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 65 °C 70 °C
Operating Temperature-Min
Organization 64MX72 64MX72
Output Characteristics 3-STATE 3-STATE
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM144,32 DIMM168
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Self Refresh YES YES
Standby Current-Max 0.036 A 0.038 A
Supply Current-Max 2.25 mA 4.46 mA
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 3 V 3 V
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Pitch 0.8 mm 1.27 mm
Terminal Position DUAL DUAL
Base Number Matches 1 1

Compare HB52RF649DC-75B with alternatives

Compare M390S6450BTU-C75 with alternatives