HB52RD168DB-B6FL vs M464S1724BT1-C1H feature comparison

HB52RD168DB-B6FL Hitachi Ltd

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M464S1724BT1-C1H Samsung Semiconductor

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer HITACHI LTD SAMSUNG SEMICONDUCTOR INC
Part Package Code MODULE MODULE
Package Description DIMM, DIMM144,32 DIMM, DIMM144,32
Pin Count 144 144
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.02 8542.32.00.32
Access Mode SINGLE BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 6 ns 6 ns
Additional Feature AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 100 MHz 100 MHz
I/O Type COMMON COMMON
JESD-30 Code R-XDMA-N144 R-XDMA-N144
Length 67.6 mm
Memory Density 67108864 bit 1073741824 bit
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
Memory Width 4 64
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 144 144
Number of Words 16777216 words 16777216 words
Number of Words Code 16000000 16000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 65 °C 70 °C
Operating Temperature-Min
Organization 16MX4 16MX64
Output Characteristics 3-STATE 3-STATE
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM144,32 DIMM144,32
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 4096 4096
Seated Height-Max 25.4 mm
Self Refresh YES YES
Standby Current-Max 0.016 A 0.008 A
Supply Current-Max 1.76 mA 0.96 mA
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 3 V 3 V
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position DUAL DUAL
Width 3.8 mm
Base Number Matches 1 1
Rohs Code No
Moisture Sensitivity Level 1

Compare HB52RD168DB-B6FL with alternatives

Compare M464S1724BT1-C1H with alternatives