HAT2096H-EL-E vs BSZ088N03MSG feature comparison

HAT2096H-EL-E Renesas Electronics Corporation

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BSZ088N03MSG Infineon Technologies AG

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer RENESAS TECHNOLOGY CORP INFINEON TECHNOLOGIES AG
Part Package Code LFPAK
Package Description SC-100, LFPAK-5 GREEN, PLASTIC, TSDSON-8
Pin Count 5 8
Manufacturer Package Code PTZZ0005DA
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Renesas Electronics
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 40 A 40 A
Drain-source On Resistance-Max 0.01 Ω 0.0097 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G4 R-PDSO-N8
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 4 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 20 W 35 W
Pulsed Drain Current-Max (IDM) 160 A 160 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING NO LEAD
Terminal Position SINGLE DUAL
Time@Peak Reflow Temperature-Max (s) 20 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Avalanche Energy Rating (Eas) 25 mJ
JESD-609 Code e3
Operating Temperature-Min -55 °C
Terminal Finish Tin (Sn)