HAT1020R
vs
NDS8934
feature comparison
Part Life Cycle Code |
Not Recommended
|
Transferred
|
Ihs Manufacturer |
RENESAS ELECTRONICS CORP
|
NATIONAL SEMICONDUCTOR CORP
|
Part Package Code |
SOIC
|
|
Package Description |
SMALL OUTLINE, R-PDSO-G8
|
SMALL OUTLINE, R-PDSO-G8
|
Pin Count |
8
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Date Of Intro |
1995-05-01
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
20 V
|
Drain Current-Max (ID) |
5 A
|
3.8 A
|
Drain-source On Resistance-Max |
0.13 Ω
|
0.07 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
MS-012AA
|
|
JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
Number of Elements |
1
|
2
|
Number of Terminals |
8
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
2.5 W
|
2 W
|
Pulsed Drain Current-Max (IDM) |
40 A
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
4
|
Rohs Code |
|
No
|
HTS Code |
|
8541.29.00.95
|
JESD-609 Code |
|
e0
|
Power Dissipation Ambient-Max |
|
2 W
|
Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
Compare HAT1020R with alternatives
Compare NDS8934 with alternatives