HAF1008S
vs
SUD19P06-60L-E3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Not Recommended
Ihs Manufacturer
RENESAS ELECTRONICS CORP
VISHAY SILICONIX
Package Description
LDPAK-3
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
4
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
20 A
19 A
Drain-source On Resistance-Max
0.08 Ω
0.06 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Power Dissipation-Max (Abs)
50 W
46 W
Pulsed Drain Current-Max (IDM)
40 A
30 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
3
Pbfree Code
Rohs Code
Part Package Code
TO-252
Avalanche Energy Rating (Eas)
24.2 mJ
JEDEC-95 Code
TO-252
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Terminal Finish
Matte Tin (Sn) - annealed
Time@Peak Reflow Temperature-Max (s)
30
Compare HAF1008S with alternatives
Compare SUD19P06-60L-E3 with alternatives