H5TQ2G63FFR-H9I
vs
K4W2G1646C-HC1A0
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SK HYNIX INC
SAMSUNG SEMICONDUCTOR INC
Part Package Code
BGA
BGA
Package Description
TFBGA, BGA96,9X16,32
TFBGA,
Pin Count
96
96
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.36
8542.32.00.36
Access Mode
MULTI BANK PAGE BURST
MULTI BANK PAGE BURST
Access Time-Max
0.255 ns
0.18 ns
Additional Feature
AUTO/SELF REFRESH
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
667 MHz
I/O Type
COMMON
Interleaved Burst Length
4,8
JESD-30 Code
R-PBGA-B96
R-PBGA-B96
Length
13 mm
13.3 mm
Memory Density
2147483648 bit
2147483648 bit
Memory IC Type
DDR3 DRAM
DDR DRAM
Memory Width
16
16
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
96
96
Number of Words
134217728 words
134217728 words
Number of Words Code
128000000
128000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
85 °C
95 °C
Operating Temperature-Min
-40 °C
Organization
128MX16
128MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
TFBGA
TFBGA
Package Equivalence Code
BGA96,9X16,32
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
8192
Seated Height-Max
1.2 mm
1.2 mm
Self Refresh
YES
YES
Sequential Burst Length
4,8
Standby Current-Max
0.012 A
Supply Current-Max
0.2 mA
Supply Voltage-Max (Vsup)
1.575 V
1.575 V
Supply Voltage-Min (Vsup)
1.425 V
1.425 V
Supply Voltage-Nom (Vsup)
1.5 V
1.5 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
INDUSTRIAL
OTHER
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
7.5 mm
7.5 mm
Base Number Matches
1
1
Compare H5TQ2G63FFR-H9I with alternatives
Compare K4W2G1646C-HC1A0 with alternatives