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H5PS1G63EFR-G7P vs EDE1116ABSE-6E-E feature comparison

H5PS1G63EFR-G7P SK Hynix Inc

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EDE1116ABSE-6E-E Elpida Memory Inc

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SK HYNIX INC ELPIDA MEMORY INC
Part Package Code BGA BGA
Package Description TFBGA, BGA84,9X15,32 TFBGA, BGA68,9X19,32
Pin Count 84 92
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.32 8542.32.00.32
Access Mode MULTI BANK PAGE BURST MULTI BANK PAGE BURST
Access Time-Max 0.35 ns 0.45 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 533 MHz 333 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 4,8 4,8
JESD-30 Code R-PBGA-B84 R-PBGA-B92
Length 13 mm 18.2 mm
Memory Density 1073741824 bit 1073741824 bit
Memory IC Type DDR2 DRAM DDR2 DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 84 92
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 95 °C 85 °C
Operating Temperature-Min
Organization 64MX16 64MX16
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Equivalence Code BGA84,9X15,32 BGA68,9X19,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Sequential Burst Length 4,8 4,8
Supply Voltage-Max (Vsup) 1.9 V 1.9 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Width 8 mm 10.2 mm
Base Number Matches 1 1
Standby Current-Max 0.01 A
Supply Current-Max 0.36 mA
Memory » DRAMs
Memory » DRAMs

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Compare EDE1116ABSE-6E-E with alternatives