GVT73024UL8TSB-55I
vs
CY7C186L-55DMB
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
CYPRESS SEMICONDUCTOR CORP
CYPRESS SEMICONDUCTOR CORP
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
3A001.A.2.C
HTS Code
8542.32.00.41
8542.32.00.41
Access Time-Max
55 ns
55 ns
I/O Type
COMMON
COMMON
JESD-30 Code
R-PDSO-G32
R-XDIP-T28
JESD-609 Code
e0
e0
Memory Density
1048576 bit
65536 bit
Memory IC Type
STANDARD SRAM
STANDARD SRAM
Memory Width
8
8
Number of Terminals
32
28
Number of Words
131072 words
8192 words
Number of Words Code
128000
8000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
85 °C
125 °C
Operating Temperature-Min
-40 °C
-55 °C
Organization
128KX8
8KX8
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
CERAMIC
Package Code
TSSOP
DIP
Package Equivalence Code
TSSOP32,.8,20
DIP28,.6
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Standby Current-Max
0.000005 A
0.001 A
Standby Voltage-Min
1.5 V
Supply Current-Max
0.05 mA
0.1 mA
Supply Voltage-Nom (Vsup)
3 V
5 V
Surface Mount
YES
NO
Technology
CMOS
CMOS
Temperature Grade
INDUSTRIAL
MILITARY
Terminal Finish
TIN LEAD
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Pitch
0.5 mm
2.54 mm
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Screening Level
38535Q/M;38534H;883B
Compare GVT73024UL8TSB-55I with alternatives
Compare CY7C186L-55DMB with alternatives