GS8672D18BGE-250T vs K7R641884M-EC25S feature comparison

GS8672D18BGE-250T GSI Technology

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K7R641884M-EC25S Samsung Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer GSI TECHNOLOGY SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA
Package Description LBGA, BGA165,11X15,40 BGA, BGA165,11X15,40
Pin Count 165
Reach Compliance Code compliant unknown
ECCN Code 3A991.B.2.A 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 0.45 ns 0.45 ns
Additional Feature PIPELINE ARCHITECTURE
Clock Frequency-Max (fCLK) 250 MHz 250 MHz
I/O Type SEPARATE SEPARATE
JESD-30 Code R-PBGA-B165 R-PBGA-B165
Length 17 mm
Memory Density 75497472 bit 75497472 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 18 18
Number of Functions 1
Number of Terminals 165 165
Number of Words 4194304 words 4194304 words
Number of Words Code 4000000 4000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 4MX18 4MX18
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code LBGA BGA
Package Equivalence Code BGA165,11X15,40 BGA165,11X15,40
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE GRID ARRAY
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.5 mm
Standby Voltage-Min 1.7 V 1.7 V
Supply Current-Max 0.98 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form BALL BALL
Terminal Pitch 1 mm 1 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 15 mm
Base Number Matches 1 1
Pbfree Code Yes
JESD-609 Code e1
Moisture Sensitivity Level 3
Terminal Finish TIN SILVER COPPER

Compare GS8672D18BGE-250T with alternatives

Compare K7R641884M-EC25S with alternatives