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GS8662T36BD-333I vs CY7C1514KV18-250BZXI feature comparison

GS8662T36BD-333I GSI Technology

Buy Now Datasheet

CY7C1514KV18-250BZXI Cypress Semiconductor

Buy Now Datasheet
Pbfree Code No Yes
Rohs Code No Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer GSI TECHNOLOGY CYPRESS SEMICONDUCTOR CORP
Part Package Code BGA BGA
Package Description LBGA, BGA165,11X15,40 FBGA-165
Pin Count 165 165
Reach Compliance Code compliant compliant
ECCN Code 3A991.B.2.B 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Factory Lead Time 24 Weeks
Access Time-Max 0.45 ns 0.45 ns
Additional Feature PIPELINED ARCHITECTURE, LATE WRITE PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V
Clock Frequency-Max (fCLK) 333 MHz 250 MHz
I/O Type COMMON SEPARATE
JESD-30 Code R-PBGA-B165 R-PBGA-B165
JESD-609 Code e0 e1
Length 15 mm 15 mm
Memory Density 75497472 bit 75497472 bit
Memory IC Type DDR SRAM QDR SRAM
Memory Width 36 36
Number of Functions 1 1
Number of Terminals 165 165
Number of Words 2097152 words 2097152 words
Number of Words Code 2000000 2000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 2MX36 2MX36
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code LBGA LBGA
Package Equivalence Code BGA165,11X15,40 BGA165,11X15,40
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.4 mm 1.4 mm
Standby Voltage-Min 1.7 V 1.7 V
Supply Current-Max 0.695 mA 0.79 mA
Supply Voltage-Max (Vsup) 1.9 V 1.9 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Finish TIN LEAD Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL BALL
Terminal Pitch 1 mm 1 mm
Terminal Position BOTTOM BOTTOM
Width 13 mm 13 mm
Base Number Matches 1 2
Moisture Sensitivity Level 3
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 20
Memory » SRAMs
Memory » SRAMs

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