GS8662T11BD-500
vs
GS8662DT11BD-450IT
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
GSI TECHNOLOGY
|
GSI TECHNOLOGY
|
Part Package Code |
BGA
|
BGA
|
Package Description |
LBGA,
|
LBGA,
|
Pin Count |
165
|
165
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
3A991.B.2.B
|
3A991.B.2.A
|
HTS Code |
8542.32.00.41
|
8542.32.00.41
|
Factory Lead Time |
24 Weeks
|
|
Access Time-Max |
0.45 ns
|
0.45 ns
|
Additional Feature |
PIPELINED ARCHITECTURE
|
PIPELINED ARCHITECTURE
|
JESD-30 Code |
R-PBGA-B165
|
R-PBGA-B165
|
JESD-609 Code |
e0
|
|
Length |
15 mm
|
15 mm
|
Memory Density |
75497472 bit
|
75497472 bit
|
Memory IC Type |
DDR SRAM
|
QDR SRAM
|
Memory Width |
9
|
9
|
Number of Functions |
1
|
1
|
Number of Terminals |
165
|
165
|
Number of Words |
8388608 words
|
8388608 words
|
Number of Words Code |
8000000
|
8000000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Operating Temperature-Max |
70 °C
|
85 °C
|
Operating Temperature-Min |
|
-40 °C
|
Organization |
8MX9
|
8MX9
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
LBGA
|
LBGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, LOW PROFILE
|
GRID ARRAY, LOW PROFILE
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Qualification Status |
Not Qualified
|
|
Seated Height-Max |
1.4 mm
|
1.4 mm
|
Supply Voltage-Max (Vsup) |
1.9 V
|
1.9 V
|
Supply Voltage-Min (Vsup) |
1.7 V
|
1.7 V
|
Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
COMMERCIAL
|
INDUSTRIAL
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
1 mm
|
1 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Width |
13 mm
|
13 mm
|
Base Number Matches |
1
|
1
|
|
|
|
Compare GS8662T11BD-500 with alternatives
Compare GS8662DT11BD-450IT with alternatives