GS8161E18DGT-200V
vs
GS8161E18DGT-200IVT
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
GSI TECHNOLOGY
|
GSI TECHNOLOGY
|
| Part Package Code |
QFP
|
QFP
|
| Package Description |
QFP,
|
QFP,
|
| Pin Count |
100
|
100
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
3A991.B.2.B
|
3A991.B.2.A
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Factory Lead Time |
24 Weeks
|
|
| Access Time-Max |
6.5 ns
|
6.5 ns
|
| Additional Feature |
FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V
|
FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V
|
| JESD-30 Code |
R-PQFP-G100
|
R-PQFP-G100
|
| JESD-609 Code |
e3
|
|
| Memory Density |
18874368 bit
|
18874368 bit
|
| Memory IC Type |
CACHE SRAM
|
CACHE SRAM
|
| Memory Width |
18
|
18
|
| Moisture Sensitivity Level |
3
|
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
100
|
100
|
| Number of Words |
1048576 words
|
1048576 words
|
| Number of Words Code |
1000000
|
1000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
85 °C
|
| Operating Temperature-Min |
|
-40 °C
|
| Organization |
1MX18
|
1MX18
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
QFP
|
QFP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLATPACK
|
FLATPACK
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Supply Voltage-Max (Vsup) |
2 V
|
2 V
|
| Supply Voltage-Min (Vsup) |
1.7 V
|
1.7 V
|
| Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
INDUSTRIAL
|
| Terminal Finish |
Matte Tin (Sn)
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
QUAD
|
QUAD
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
2
|
1
|
|
|
|
Compare GS8161E18DGT-200V with alternatives
Compare GS8161E18DGT-200IVT with alternatives