GS81302T38AGD-550
vs
GS81302TT38AGD-550I
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
GSI TECHNOLOGY
|
GSI TECHNOLOGY
|
Package Description |
LBGA,
|
LBGA,
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
3A991.B.2.B
|
3A991.B.2.B
|
HTS Code |
8542.32.00.41
|
8542.32.00.41
|
Factory Lead Time |
24 Weeks
|
24 Weeks
|
Date Of Intro |
2017-08-29
|
|
Access Time-Max |
0.45 ns
|
0.45 ns
|
JESD-30 Code |
R-PBGA-B165
|
R-PBGA-B165
|
Length |
15 mm
|
15 mm
|
Memory Density |
150994944 bit
|
150994944 bit
|
Memory IC Type |
DDR SRAM
|
DDR SRAM
|
Memory Width |
36
|
36
|
Number of Functions |
1
|
1
|
Number of Terminals |
165
|
165
|
Number of Words |
4194304 words
|
4194304 words
|
Number of Words Code |
4000000
|
4000000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Operating Temperature-Max |
85 °C
|
100 °C
|
Operating Temperature-Min |
|
-40 °C
|
Organization |
4MX36
|
4MX36
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
LBGA
|
LBGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, LOW PROFILE
|
GRID ARRAY, LOW PROFILE
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Seated Height-Max |
1.4 mm
|
1.4 mm
|
Supply Voltage-Max (Vsup) |
1.9 V
|
1.9 V
|
Supply Voltage-Min (Vsup) |
1.7 V
|
1.7 V
|
Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
OTHER
|
INDUSTRIAL
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
1 mm
|
1 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Width |
13 mm
|
13 mm
|
Base Number Matches |
1
|
1
|
|
|
|
Compare GS81302T38AGD-550 with alternatives
Compare GS81302TT38AGD-550I with alternatives