GS1GTR
vs
M4
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
GRANDE ELECTRONICS LTD
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
|
| Date Of Intro |
2019-04-04
|
|
| Additional Feature |
LOW POWER LOSS
|
|
| Application |
GENERAL PURPOSE
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.1 V
|
1.1 V
|
| JESD-30 Code |
R-PDSO-C2
|
|
| Non-rep Pk Forward Current-Max |
30 A
|
30 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
175 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Rep Pk Reverse Voltage-Max |
400 V
|
400 V
|
| Reverse Current-Max |
5 µA
|
|
| Reverse Recovery Time-Max |
2.5 µs
|
1.8 µs
|
| Reverse Test Voltage |
400 V
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
C BEND
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
1
|
28
|
|
|
|
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