GS1B vs SS110LW feature comparison

GS1B JGD Semiconductors Co Ltd

Buy Now Datasheet

SS110LW Taiwan Semiconductor

Buy Now Datasheet
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer JGD SEMICONDUCTORS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown not_compliant
Configuration SINGLE SINGLE
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 0.8 V
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 1 A 1 A
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 1.8 µs
Surface Mount YES YES
Base Number Matches 20 1
Rohs Code Yes
Factory Lead Time 8 Weeks
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature LOW POWER LOSS
Application EFFICIENCY
Diode Element Material SILICON
JESD-30 Code R-PDSO-F2
Number of Terminals 2
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Reverse Current-Max 10 µA
Technology SCHOTTKY
Terminal Form FLAT
Terminal Position DUAL

Compare GS1B with alternatives

Compare SS110LW with alternatives