GP30A-E3/54
vs
1N5400GHR0G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Not Recommended
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
compliant
not_compliant
Factory Lead Time
8 Weeks
Additional Feature
FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE
HIGH RELIABILITY, LOW POWER LOSS
Application
HIGH VOLTAGE
EFFICIENCY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.2 V
1.1 V
JEDEC-95 Code
DO-201AD
DO-201AD
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
e3
Non-rep Pk Forward Current-Max
125 A
125 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Output Current-Max
3 A
3 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
50 V
50 V
Reverse Recovery Time-Max
5 µs
Surface Mount
NO
NO
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
1
ECCN Code
EAR99
HTS Code
8541.10.00.80
Samacsys Manufacturer
Taiwan Semiconductor
Peak Reflow Temperature (Cel)
260
Reference Standard
AEC-Q101
Reverse Current-Max
5 µA
Time@Peak Reflow Temperature-Max (s)
10
Compare GP30A-E3/54 with alternatives
Compare 1N5400GHR0G with alternatives