GP1001HC0G vs SF1001GHC0G feature comparison

GP1001HC0G Taiwan Semiconductor

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SF1001GHC0G Taiwan Semiconductor

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Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature LOW POWER LOSS LOW POWER LOSS
Application EFFICIENCY EFFICIENCY
Case Connection CATHODE CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 0.975 V
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e3
Non-rep Pk Forward Current-Max 125 A 125 A
Number of Elements 2 2
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 5 A 5 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101 AEC-Q101
Rep Pk Reverse Voltage-Max 50 V 50 V
Reverse Current-Max 5 µA 10 µA
Surface Mount NO NO
Terminal Finish MATTE TIN MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 1 1
Reverse Recovery Time-Max 0.035 µs

Compare GP1001HC0G with alternatives

Compare SF1001GHC0G with alternatives