GM76C28-10 vs QS8888-25DB feature comparison

GM76C28-10 Goldstar Electron Co Ltd

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QS8888-25DB Quality Semiconductor Inc

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer GOLDSTAR ELECTRON CO LTD QUALITY SEMICONDUCTOR INC
Package Description DIP-24
Reach Compliance Code unknown unknown
Access Time-Max 100 ns 25 ns
JESD-30 Code R-PDIP-T24 R-GDIP-T22
Memory Density 16384 bit 65536 bit
Memory IC Type NON-VOLATILE SRAM CACHE TAG SRAM
Memory Width 8 4
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 24 22
Number of Words 2048 words 16384 words
Number of Words Code 2000 16000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Organization 2KX8 16KX4
Output Characteristics 3-STATE 3-STATE
Output Enable YES NO
Package Body Material PLASTIC/EPOXY CERAMIC, GLASS-SEALED
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position DUAL DUAL
Base Number Matches 1 1
Rohs Code No
I/O Type COMMON
JESD-609 Code e0
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C
Package Code DIP
Package Equivalence Code DIP24,.3
Screening Level 38535Q/M;38534H;883B
Standby Current-Max 0.02 A
Standby Voltage-Min 4.5 V
Supply Current-Max 0.13 mA
Temperature Grade MILITARY
Terminal Finish TIN LEAD
Terminal Pitch 2.54 mm

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Compare QS8888-25DB with alternatives