GI510 vs BYT13-1000RL feature comparison

GI510 Galaxy Semi-Conductor Co Ltd

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BYT13-1000RL STMicroelectronics

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Rohs Code Yes
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD STMICROELECTRONICS
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application GENERAL PURPOSE FAST SOFT RECOVERY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.3 V
JEDEC-95 Code DO-27
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Pk Forward Current-Max 100 A 100 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -40 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Reverse Current-Max 5 µA 20 µA
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Additional Feature SNUBBER DIODE
Power Dissipation-Max 3.75 W
Qualification Status Not Qualified
Reverse Recovery Time-Max 0.15 µs

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