GI1104
vs
BYW52-TR
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
GENERAL INSTRUMENT CORP
VISHAY SEMICONDUCTORS
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
PATENTED DEVICE
Application
EFFICIENCY
GENERAL PURPOSE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.25 V
1 V
JEDEC-95 Code
DO-204AP
JESD-30 Code
E-LALF-W2
E-LALF-W2
Non-rep Pk Forward Current-Max
50 A
50 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-65 °C
-55 °C
Output Current-Max
2 A
2 A
Package Body Material
GLASS
GLASS
Package Shape
ELLIPTICAL
ELLIPTICAL
Package Style
LONG FORM
LONG FORM
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
200 V
200 V
Reverse Current-Max
10 µA
Reverse Recovery Time-Max
0.05 µs
4 µs
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
2
Pbfree Code
Rohs Code
Package Description
E-LALF-W2
Pin Count
2
JESD-609 Code
e2
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Technology
AVALANCHE
Terminal Finish
Tin/Silver (Sn96.5Ag3.5)
Time@Peak Reflow Temperature-Max (s)
30
Compare GI1104 with alternatives
Compare BYW52-TR with alternatives