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GBU8M vs GBU8M feature comparison

GBU8M Galaxy Semi-Conductor Co Ltd

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GBU8M Formosa Microsemi Co Ltd

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD FORMOSA MICROSEMI CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 1000 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
Non-rep Pk Forward Current-Max 200 A 200 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 8 A 8 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Surface Mount NO NO
Base Number Matches 1 2
HTS Code 8541.10.00.80
Samacsys Manufacturer Formosa Microsemi
Additional Feature UL RECOGNIZED
Diode Element Material SILICON
JESD-30 Code R-PSFM-T4
Number of Terminals 4
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Reference Standard UL RECOGNIZED
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Diodes » Bridge Rectifier Diodes
Diodes » Bridge Rectifier Diodes

Compare GBU8M with alternatives

Compare GBU8M with alternatives