GBU8J-E3/22 vs GBU8J-G feature comparison

GBU8J-E3/22 Vishay Semiconductors

Buy Now Datasheet

GBU8J-G Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY SEMICONDUCTORS SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description ROHS COMPLIANT, PLASTIC, CASE GBU, 4 PIN R-PSFM-T4
Reach Compliance Code unknown unknown
Breakdown Voltage-Min 600 V 600 V
Case Connection ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
JESD-30 Code R-PSFM-T4 R-PSFM-T4
JESD-609 Code e3
Moisture Sensitivity Level 1 1
Non-rep Pk Forward Current-Max 200 A 200 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Output Current-Max 3 A 6 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 600 V 600 V
Surface Mount NO NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Base Number Matches 1 2
ECCN Code EAR99
HTS Code 8541.10.00.80
Additional Feature HIGH RELIABILITY

Compare GBU8J-E3/22 with alternatives

Compare GBU8J-G with alternatives