GBU6J-G vs GBPC35-10W feature comparison

GBU6J-G Sangdest Microelectronics (Nanjing) Co Ltd

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GBPC35-10W Taitron Components Inc

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD TAITRON COMPONENTS INC
Package Description R-PSFM-T4 S-PUFM-W4
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Min 600 V 1000 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1.1 V
JESD-30 Code R-PSFM-T4 S-PUFM-W4
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 175 A 400 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Output Current-Max 6 A 35 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR SQUARE
Package Style FLANGE MOUNT FLANGE MOUNT
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 600 V 1000 V
Surface Mount NO NO
Terminal Form THROUGH-HOLE WIRE
Terminal Position SINGLE UPPER
Base Number Matches 2 3
Case Connection ISOLATED
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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