GBU6J-G vs DF06-G feature comparison

GBU6J-G Sangdest Microelectronics (Nanjing) Co Ltd

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DF06-G Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description R-PSFM-T4 GREEN, PLASTIC, DIP-4
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.80
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Min 600 V 600 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1.1 V
JESD-30 Code R-PSFM-T4 R-PDIP-T4
Moisture Sensitivity Level 1 1
Non-rep Pk Forward Current-Max 175 A 30 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Output Current-Max 6 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT IN-LINE
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 600 V 600 V
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE DUAL
Base Number Matches 2 3

Compare GBU6J-G with alternatives

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