GBU4M
vs
GBU4M-E3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
DIODES INC
VISHAY SEMICONDUCTORS
Reach Compliance Code
not_compliant
unknown
Breakdown Voltage-Min
1000 V
1000 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Element Material
SILICON
SILICON
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
1 V
JESD-30 Code
R-PSFM-T4
R-PSFM-T4
JESD-609 Code
e3
e3
Non-rep Pk Forward Current-Max
135 A
150 A
Number of Elements
4
4
Number of Phases
1
1
Number of Terminals
4
4
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
3.1 A
3 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Peak Reflow Temperature (Cel)
260
Rep Pk Reverse Voltage-Max
1000 V
1000 V
Reverse Current-Max
5 µA
Surface Mount
NO
NO
Terminal Finish
Matte Tin (Sn)
MATTE TIN
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Base Number Matches
25
1
Pbfree Code
Package Description
R-PSFM-T4
Pin Count
4
Manufacturer Package Code
CASE GBU
ECCN Code
EAR99
HTS Code
8541.10.00.80
Case Connection
ISOLATED
Moisture Sensitivity Level
1
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
Compare GBU4M-E3 with alternatives