GBU35G vs GBPC3504-T feature comparison

GBU35G Galaxy Semi-Conductor Co Ltd

Buy Now Datasheet

GBPC3504-T Formosa Microsemi Co Ltd

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD FORMOSA MICROSEMI CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 400 V
Case Connection ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
Non-rep Pk Forward Current-Max 400 A 400 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 155 °C 150 °C
Output Current-Max 35 A 35 A
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Rep Pk Reverse Voltage-Max 400 V 400 V
Surface Mount NO NO
Base Number Matches 1 1
Package Description S-PUFM-D4
HTS Code 8541.10.00.80
Diode Element Material SILICON
JESD-30 Code S-PUFM-D4
Number of Terminals 4
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style FLANGE MOUNT
Reference Standard UL RECOGNIZED
Terminal Form SOLDER LUG
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare GBU35G with alternatives

Compare GBPC3504-T with alternatives