GBPC3508W
vs
GBPC3508-W
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
FORMOSA MICROSEMI CO LTD
|
| Reach Compliance Code |
unknown
|
unknown
|
| Configuration |
BRIDGE, 4 ELEMENTS
|
BRIDGE, 4 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
BRIDGE RECTIFIER DIODE
|
BRIDGE RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.1 V
|
1.1 V
|
| JESD-30 Code |
S-XUFM-W4
|
S-PUFM-W4
|
| Non-rep Pk Forward Current-Max |
400 A
|
400 A
|
| Number of Elements |
4
|
4
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Output Current-Max |
35 A
|
35 A
|
| Package Body Material |
UNSPECIFIED
|
PLASTIC/EPOXY
|
| Package Shape |
SQUARE
|
SQUARE
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Power Dissipation-Max |
83.3 W
|
|
| Rep Pk Reverse Voltage-Max |
800 V
|
800 V
|
| Reverse Current-Max |
5 µA
|
|
| Reverse Test Voltage |
800 V
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
UPPER
|
UPPER
|
| Base Number Matches |
30
|
2
|
| Rohs Code |
|
Yes
|
| Package Description |
|
S-PUFM-W4
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Reference Standard |
|
UL RECOGNIZED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
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