GBPC2510W
vs
BR2510(W)
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Contact Manufacturer
Ihs Manufacturer
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code
unknown
unknown
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Element Material
SILICON
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.1 V
JESD-30 Code
S-XUFM-W4
Non-rep Pk Forward Current-Max
300 A
300 A
Number of Elements
4
4
Number of Phases
1
1
Number of Terminals
4
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Output Current-Max
25 A
25 A
Package Body Material
UNSPECIFIED
Package Shape
SQUARE
Package Style
FLANGE MOUNT
Power Dissipation-Max
83.3 W
Rep Pk Reverse Voltage-Max
1000 V
1000 V
Reverse Current-Max
5 µA
Reverse Test Voltage
1000 V
Surface Mount
NO
NO
Terminal Form
WIRE
Terminal Position
UPPER
Base Number Matches
25
2
Rohs Code
ECCN Code
EAR99
Breakdown Voltage-Min
1000 V
Peak Reflow Temperature (Cel)
260
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