GBPC2506W
vs
GBPC3510W
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Reach Compliance Code |
unknown
|
compliant
|
| Configuration |
BRIDGE, 4 ELEMENTS
|
BRIDGE, 4 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
BRIDGE RECTIFIER DIODE
|
BRIDGE RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.1 V
|
1.1 V
|
| JESD-30 Code |
S-XUFM-W4
|
S-PUFM-W4
|
| Non-rep Pk Forward Current-Max |
300 A
|
400 A
|
| Number of Elements |
4
|
4
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-50 °C
|
| Output Current-Max |
25 A
|
35 A
|
| Package Body Material |
UNSPECIFIED
|
PLASTIC/EPOXY
|
| Package Shape |
SQUARE
|
SQUARE
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Power Dissipation-Max |
83.3 W
|
|
| Rep Pk Reverse Voltage-Max |
600 V
|
1000 V
|
| Reverse Current-Max |
5 µA
|
|
| Reverse Test Voltage |
600 V
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
UPPER
|
UPPER
|
| Base Number Matches |
29
|
28
|
| Rohs Code |
|
Yes
|
| Factory Lead Time |
|
6 Weeks
|
| Samacsys Manufacturer |
|
Taiwan Semiconductor
|
| Breakdown Voltage-Min |
|
1000 V
|
| Case Connection |
|
ISOLATED
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Qualification Status |
|
Not Qualified
|
| Reference Standard |
|
UL RECOGNIZED
|
| Terminal Finish |
|
Nickel (Ni)
|
|
|
|
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