GBL06D2G
vs
GBL06-M3/51
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
VISHAY SEMICONDUCTORS
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Samacsys Manufacturer
Taiwan Semiconductor
Breakdown Voltage-Min
600 V
600 V
Case Connection
ISOLATED
ISOLATED
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Element Material
SILICON
SILICON
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
1 V
JESD-30 Code
R-PSIP-T4
R-PSIP-T4
JESD-609 Code
e3
e3
Non-rep Pk Forward Current-Max
150 A
150 A
Number of Elements
4
4
Number of Phases
1
1
Number of Terminals
4
4
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
3 A
3 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Peak Reflow Temperature (Cel)
260
Reference Standard
UL RECOGNIZED
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
600 V
600 V
Surface Mount
NO
NO
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
10
Base Number Matches
1
2
Package Description
R-PSIP-T4
Compare GBL06D2G with alternatives
Compare GBL06-M3/51 with alternatives