GBL02-M3/51
vs
GBL02HD2G
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
VISHAY SEMICONDUCTORS
TAIWAN SEMICONDUCTOR CO LTD
Package Description
R-PSIP-T4
R-PSIP-T4
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Breakdown Voltage-Min
200 V
200 V
Case Connection
ISOLATED
ISOLATED
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Element Material
SILICON
SILICON
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
1.1 V
JESD-30 Code
R-PSIP-T4
R-PSIP-T4
JESD-609 Code
e3
e3
Non-rep Pk Forward Current-Max
150 A
150 A
Number of Elements
4
4
Number of Phases
1
1
Number of Terminals
4
4
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
3 A
3 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Reference Standard
UL RECOGNIZED
AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max
200 V
200 V
Surface Mount
NO
NO
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Base Number Matches
2
1
Rohs Code
Samacsys Manufacturer
Taiwan Semiconductor
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
10
Compare GBL02-M3/51 with alternatives
Compare GBL02HD2G with alternatives