GBJ2506 vs GSIB2560N-M3/45 feature comparison

GBJ2506 WEITRON INTERNATIONAL CO., LTD.

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GSIB2560N-M3/45 Vishay Semiconductors

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Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer WEITRON TECHNOLOGY CO LTD VISHAY SEMICONDUCTORS
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Breakdown Voltage-Min 600 V 600 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1 V
JESD-30 Code R-PSFM-T4 R-PSFM-T4
Non-rep Pk Forward Current-Max 350 A 350 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -50 °C -55 °C
Output Current-Max 4.2 A 3.5 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Rep Pk Reverse Voltage-Max 600 V 600 V
Reverse Current-Max 10 µA
Reverse Test Voltage 600 V
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Base Number Matches 1 1
Package Description R-PSFM-T4
Pin Count 4
Manufacturer Package Code GSIB-5S
Samacsys Manufacturer Vishay
Case Connection ISOLATED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard UL RECOGNIZED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Compare GSIB2560N-M3/45 with alternatives