GBJ2502
vs
GBJ2502
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Contact Manufacturer
Ihs Manufacturer
GOODWORK SEMICONDUCTOR CO LTD
WEITRON TECHNOLOGY CO LTD
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Breakdown Voltage-Min
100 V
200 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1.05 V
1.1 V
Non-rep Pk Forward Current-Max
350 A
350 A
Number of Elements
4
4
Number of Phases
1
1
Operating Temperature-Max
150 °C
150 °C
Output Current-Max
4.2 A
4.2 A
Rep Pk Reverse Voltage-Max
100 V
200 V
Surface Mount
NO
NO
Base Number Matches
1
1
HTS Code
8541.10.00.80
Diode Element Material
SILICON
JESD-30 Code
R-PSFM-T4
Number of Terminals
4
Operating Temperature-Min
-50 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Reverse Current-Max
10 µA
Reverse Test Voltage
200 V
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Compare GBJ2502 with alternatives
Compare GBJ2502 with alternatives