G1BFSF2
vs
RGP10BZ
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Contact Manufacturer
|
| Ihs Manufacturer |
YANGZHOU YANGJIE ELECTRONICS CO LTD
|
GALAXY SEMI-CONDUCTOR CO LTD
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
|
| Additional Feature |
FREE WHEELING DIODE
|
|
| Application |
GENERAL PURPOSE
|
|
| Breakdown Voltage-Min |
100 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.1 V
|
1.3 V
|
| JESD-30 Code |
R-PDSO-F2
|
|
| Non-rep Pk Forward Current-Max |
30 A
|
30 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Reverse Current-Max |
5 µA
|
|
| Reverse Test Voltage |
100 V
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
FLAT
|
|
| Terminal Position |
DUAL
|
|
| Base Number Matches |
1
|
2
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Reverse Recovery Time-Max |
|
0.15 µs
|
|
|
|
Compare G1BFSF2 with alternatives
Compare RGP10BZ with alternatives