FTE512S8N13I
vs
FTE512S8N13M
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
FORCE TECHNOLOGIES LTD
FORCE TECHNOLOGIES LTD
Package Description
DIP,
DIP,
Reach Compliance Code
compliant
compliant
ECCN Code
3A991.B.1.B.1
3A001.A.2.C
HTS Code
8542.32.00.51
8542.32.00.51
Access Time-Max
135 ns
135 ns
JESD-30 Code
R-CDIP-T32
R-CDIP-T32
Length
42.164 mm
42.164 mm
Memory Density
4194304 bit
4194304 bit
Memory IC Type
EEPROM
EEPROM
Memory Width
8
8
Number of Functions
1
1
Number of Terminals
32
32
Number of Words
524288 words
524288 words
Number of Words Code
512000
512000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
85 °C
125 °C
Operating Temperature-Min
-40 °C
-55 °C
Organization
512KX8
512KX8
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Code
DIP
DIP
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Programming Voltage
5 V
5 V
Seated Height-Max
10.16 mm
10.16 mm
Supply Voltage-Max (Vsup)
5.5 V
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
INDUSTRIAL
MILITARY
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Pitch
2.54 mm
2.54 mm
Terminal Position
DUAL
DUAL
Width
15.24 mm
15.24 mm
Write Cycle Time-Max (tWC)
10 ms
10 ms
Base Number Matches
1
1
Compare FTE512S8N13I with alternatives
Compare FTE512S8N13M with alternatives