We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In

FT6164L-100DWM vs 5962H3829435SXX feature comparison

FT6164L-100DWM Force Technologies Ltd

Buy Now Datasheet

5962H3829435SXX Cobham Semiconductor Solutions

Buy Now Datasheet
Part Life Cycle Code Active Obsolete
Ihs Manufacturer FORCE TECHNOLOGIES LTD AEROFLEX COLORADO SPRINGS
Part Package Code DIP DIP
Package Description DIP, DIP,
Pin Count 28 28
Reach Compliance Code compliant unknown
ECCN Code 3A001.A.2.C 3A001.A.1.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 100 ns 85 ns
Additional Feature LG-MAX
JESD-30 Code R-GDIP-T28 R-GDIP-T28
Length 37.846 mm 35.56 mm
Memory Density 65536 bit 65536 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 28 28
Number of Words 8192 words 8192 words
Number of Words Code 8000 8000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C -55 °C
Organization 8KX8 8KX8
Package Body Material CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED
Package Code DIP DIP
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Screening Level MIL-STD-883 Class B (Modified) MIL-PRF-38535 Class V
Seated Height-Max 5.8928 mm 4.445 mm
Supply Current-Max 0.145 mA
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade MILITARY MILITARY
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Width 15.24 mm 15.24 mm
Base Number Matches 1 2
Qualification Status Not Qualified
Total Dose 1M Rad(Si) V
Memory » SRAMs
Memory » SRAMs

Compare FT6164L-100DWM with alternatives

Compare 5962H3829435SXX with alternatives