FSYC264R3
vs
FSYC264R3
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
INTERSIL CORP
|
| Package Description |
CHIP CARRIER, R-CBCC-N3
|
SMALL OUTLINE, R-CDSO-N3
|
| Pin Count |
3
|
3
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
250 V
|
250 V
|
| Drain Current-Max (ID) |
34 A
|
34 A
|
| Drain-source On Resistance-Max |
0.08 Ω
|
0.08 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-CBCC-N3
|
R-CDSO-N3
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
CHIP CARRIER
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
208 W
|
208 W
|
| Pulsed Drain Current-Max (IDM) |
102 A
|
102 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
BOTTOM
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Part Package Code |
|
DLCC
|
| Additional Feature |
|
RADIATION HARDENED
|
|
|
|