FR306B0G
vs
FR306X0G
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Package Description
O-PALF-W2
O-PALF-W2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
LOW POWER LOSS
HIGH RELIABILITY, LOW POWER LOSS
Application
EFFICIENCY
EFFICIENCY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.2 V
1.2 V
JEDEC-95 Code
DO-201AD
DO-201AD
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Pk Forward Current-Max
150 A
150 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
3 A
3 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Rep Pk Reverse Voltage-Max
800 V
800 V
Reverse Current-Max
5 µA
5 µA
Reverse Recovery Time-Max
0.5 µs
0.5 µs
Surface Mount
NO
NO
Terminal Finish
MATTE TIN
PURE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Compare FR306B0G with alternatives
Compare FR306X0G with alternatives