FR105GHB0G vs FR105G-H feature comparison

FR105GHB0G Taiwan Semiconductor

Buy Now Datasheet

FR105G-H Formosa Microsemi Co Ltd

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD FORMOSA MICROSEMI CO LTD
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature HIGH RELIABILITY, LOW POWER LOSS
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code DO-204AL DO-41
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 600 V 600 V
Reverse Recovery Time-Max 0.25 µs 0.25 µs
Surface Mount NO NO
Terminal Finish TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 1 1
Forward Voltage-Max (VF) 1.3 V
Non-rep Pk Forward Current-Max 30 A

Compare FR105GHB0G with alternatives

Compare FR105G-H with alternatives