FQU13N06L vs FQD13N06 feature comparison

FQU13N06L Fairchild Semiconductor Corporation

Buy Now Datasheet

FQD13N06 Fairchild Semiconductor Corporation

Buy Now Datasheet
Pbfree Code No No
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-251 TO-252
Package Description IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Additional Feature FAST SWITCHING, AVALANCHE RATED FAST SWITCHING, AVALANCHE RATED
Avalanche Energy Rating (Eas) 90 mJ 85 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 11 A 10 A
Drain-source On Resistance-Max 0.145 Ω 0.14 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251 TO-252
JESD-30 Code R-PSIP-T3 R-PSSO-G2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 28 W 2.5 W
Pulsed Drain Current-Max (IDM) 44 A 40 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Case Connection DRAIN
Moisture Sensitivity Level 1

Compare FQU13N06L with alternatives

Compare FQD13N06 with alternatives