FQPF10N20 vs IPD90N06S306ATMA1 feature comparison

FQPF10N20 Rochester Electronics LLC

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IPD90N06S306ATMA1 Infineon Technologies AG

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description TO-220F, 3 PIN GREEN, TO-252, 3 PIN
Pin Count 3
Reach Compliance Code unknown compliant
Avalanche Energy Rating (Eas) 180 mJ 250 mJ
Case Connection ISOLATED DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 55 V
Drain Current-Max (ID) 6.8 A 90 A
Drain-source On Resistance-Max 0.36 Ω 0.006 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-252AA
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 27.2 A 360 A
Qualification Status COMMERCIAL
Surface Mount NO YES
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE

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