FQI19N10LTU
vs
RSD175N10TL
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Not Recommended
|
Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
ROHM CO LTD
|
Part Package Code |
TO-262
|
SC-63
|
Package Description |
IN-LINE, R-PSIP-T3
|
SMALL OUTLINE, R-PSSO-G2
|
Pin Count |
3
|
3
|
Reach Compliance Code |
unknown
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
220 mJ
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
19 A
|
17.5 A
|
Drain-source On Resistance-Max |
0.11 Ω
|
0.119 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-262AA
|
|
JESD-30 Code |
R-PSIP-T3
|
R-PSSO-G2
|
JESD-609 Code |
e0
|
e2
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
75 W
|
|
Pulsed Drain Current-Max (IDM) |
76 A
|
35 A
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
NO
|
YES
|
Terminal Finish |
TIN LEAD
|
Tin/Copper (Sn/Cu)
|
Terminal Form |
THROUGH-HOLE
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Moisture Sensitivity Level |
|
1
|
Peak Reflow Temperature (Cel) |
|
260
|
Time@Peak Reflow Temperature-Max (s) |
|
10
|
|
|
|
Compare FQI19N10LTU with alternatives
Compare RSD175N10TL with alternatives