FQI12N60TU
vs
2SK3116-S
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
NEC ELECTRONICS CORP
|
Part Package Code |
TO-262AA
|
TO-262AA
|
Package Description |
I2PAK-3
|
FIN CUT, MP-25, 3 PIN
|
Pin Count |
3
|
3
|
Reach Compliance Code |
unknown
|
compliant
|
Avalanche Energy Rating (Eas) |
790 mJ
|
37.5 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
600 V
|
600 V
|
Drain Current-Max (ID) |
10.5 A
|
7.5 A
|
Drain-source On Resistance-Max |
0.7 Ω
|
1.2 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-262AA
|
TO-262AA
|
JESD-30 Code |
R-PSIP-T3
|
R-PSIP-T3
|
Moisture Sensitivity Level |
NOT SPECIFIED
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
42 A
|
30 A
|
Qualification Status |
COMMERCIAL
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
NOT SPECIFIED
|
TIN LEAD
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
ECCN Code |
|
EAR99
|
Case Connection |
|
DRAIN
|
JESD-609 Code |
|
e0
|
|
|
|
Compare FQI12N60TU with alternatives
Compare 2SK3116-S with alternatives