FQD630TM vs FQU5N20TU feature comparison

FQD630TM Fairchild Semiconductor Corporation

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FQU5N20TU Fairchild Semiconductor Corporation

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-252 TO-251
Package Description DPAK-3 IPAK-3
Pin Count 3 3
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 163 mJ 60 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 7 A 3.8 A
Drain-source On Resistance-Max 0.4 Ω 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252 TO-251
JESD-30 Code R-PSSO-G2 R-PSIP-T3
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 46 W 37 W
Pulsed Drain Current-Max (IDM) 28 A 15.2 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Matte Tin (Sn) Tin/Lead (Sn/Pb)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1

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